In the Schottky diode bear especially the majority carrier to function. The electrons are able to virtually unimpeded flow of electricity to follow, and hence the high speed of the diode to a position. The majority charge carriers (electrons) have a high potential energy. It creates a positive space charge zone, since the positive charges in the semiconductor materials are locally.

When you add together the materials shifts the load line in the direction of metal. It creates a Elektronenmagel in n-doped semiconductors. This area is also called the impoverishment zone.

Applying a voltage in the forward direction (negative pole of n-semiconductor), electrons in the depletion zone pushed the barrier is getting smaller, until finally she is completely eliminated.

Applying a voltage lock in the direction of (negative pole to p-metal), with the tension among the breakthrough voltage must lie, the bigger barrier. Nevertheless, a small flowing stream which meanders through the thermal excitation of electrons explain.

The special feature of the Schottky diode is about the effect of the Schottky barrier explain.

One assumes that the barrier at the pn transition by the higher work function of metal compared to the semiconductor material arises. Leads to the two materials together, increases the potential to shift some of the electrons in the p-layer. The Schottky barrier arises.

Indeed, there is the Schottky barrier but by strong molecular modification of the surface of contact between metal and semiconductor. Continue playing the processing, especially in regard to the cleaning of surfaces play a major role.