Named after the German physicist and electrical engineer Walter Schottky (1886-1976).

The operation corresponds to an ordinary semiconductor pn-diode (silicon germanium).
The peculiarity of the Schottky diode is under construction. The p-layer consists of metal and the n-layer of a semiconductor material (SiC, GaAs, SiGe).

Symbol Diode

This results in certain properties for the electro-technical application. On the basis of the metal, the narrow-pn transition and the low river voltage (0.3 V) turns the Schottky diode much faster than conventional diodes. It comes with switching times of 1-3ns the ideal diode very close and is thus especially good for high-frequency applications. Deleted continue the forward or Rückwärtserholverhalten due to the limited capacity of the metal electrode.

A serious drawback is that the narrow barrier leakage is higher than in semiconductor diodes.




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