1. Barrier Layer Capacity
(Content/Formeln und Kerngrößen)

The reason for the variability of capacity is in the pn transition. If the diode operates in lock direction, growing space charge zone with rising tension. This reduces the capacity.   with However, ...

2. Dynamic Behavior
(Content/Formeln und Kerngrößen)

In AC applications is primarily about the capacity of diodes exploit. Capacitive differences exist mainly blocking and pass direction. Therefore, the barrier layer capacity and diffusion capacity considered. ...

3. Leakage (Recombination Electricity)
(Content/Formeln und Kerngrößen)

... through the barrier layer can be found.  ...

4. Function of the Schottky Diode
(Content/Schottky Diode)

... to the semiconductor material arises. Leads to the two materials together, increases the potential to shift some of the electrons in the p-layer. The Schottky barrier arises. Indeed, there is the Schottky ...

5. Schottky-Diode
(Content/Schottky Diode)

... diode is under construction. The p-layer consists of metal and the n-layer of a semiconductor material (SiC, GaAs, SiGe).   Symbol Diode This results in certain properties for the electro-technical ...

6. Assembling of the Semiconductor Diode
(Content/Diode)

... the layer acts as an insulator and prevent a further diffusion. The voltage is anti-called diffusion tension and must be at a nearby stream in the direction of passage only to be overcome and will be called ...

7. Diode
(Content/Diode)

... and the other n-doped. Through its assembly is to be a transitional layer. All of their abilities, plug in the interplay of these small crystals and are explained here. [backbutton]  ...