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The Schottky diode is named after the German physicist Walter Schottky. It is also known as hot-carrier diode or Schottky barrier. In 1938 he developed the model of the metal-semiconductor contact. For ...
2. Schottky-Diode
(Content/Schottky Diode)
Named after the German physicist and electrical engineer Walter Schottky (1886-1976). The operation corresponds to an ordinary semiconductor pn-diode (silicon germanium). The peculiarity of the Schottky ...
... Forward voltage (values: 0.65V silicon germanium: 0.25 V). The special is that the boundary layer by the voltage can be controlled. When the diode to a circuit that n-plus range and p-minus range, ...
4. Diode
(Content/Diode)
... in a different direction, locks the diode and acts as an insulator. To this effect, semiconductors are used. Silicon and germanium are the most common elements. The crystals have are endowed with a p-doped ...
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